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Last edited by WorkBot
February 12, 2010 | History

Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry 2 editions

Certification of a standard reference material for the determination o ...
Brian Rennex
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Classifications

Library of Congress QC100 .U57 no. 260-121
Dewey 602/.18 s, 621.3815/2

2 editions First published in 1994

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Cover of: Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry
1994, U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, For sale by the Supt. of Docs., U.S. G.P.O.
Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry
Microform in English
Cover of: Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry
1994, U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, For sale by the Supt. of Docs., U.S. G.P.O.
Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry
in English

History

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February 12, 2010 Edited by WorkBot add more information to works
December 10, 2009 Created by WorkBot add works page