An edition of Strained silicon heterostructures
(2001)
Strained Silicon Heterostructures
Materials and Devices (Iee Circuits, Devices and Systems Series, 12)
by C. K. Maiti, N. B. Chakrabarti, and S. K. Ray
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| Edition | Availability |
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1
Strained Silicon Heterostructures: Materials and Devices
2011, Institution of Engineering & Technology
in English
1849191670 9781849191678
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2
Strained silicon heterostructures: materials and devices
2001, Institution of Electrical Engineers, The Institution of Engineering and Technology
in English
0852967780 9780852967782
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3
Strained Silicon Heterostructures: Materials and Devices (Iee Circuits, Devices and Systems Series, 12)
June 1, 2001, Institution of Electrical Engineers
Hardcover
in English
0852967780 9780852967782
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4
Strained silicon heterostructures: materials and devices
2001, Institution of Electrical Engineers
in English
0852967780 9780852967782
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Book Details
First Sentence
"The first transistor invented used elemental germanium as the semiconducting material."
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- Created April 30, 2008
- 6 revisions
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| July 31, 2019 | Edited by MARC Bot | associate edition with work OL12609427W |
| August 12, 2010 | Edited by IdentifierBot | added LibraryThing ID |
| April 24, 2010 | Edited by Open Library Bot | Fixed duplicate goodreads IDs. |
| April 16, 2010 | Edited by bgimpertBot | Added goodreads ID. |
| April 30, 2008 | Created by an anonymous user | Imported from amazon.com record |