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Previews available in: English
Showing 4 featured editions. View all 4 editions?
Edition | Availability |
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1
Strained Silicon Heterostructures: Materials and Devices
2011, Institution of Engineering & Technology
in English
1849191670 9781849191678
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2
Strained Silicon Heterostructures: Materials and Devices (Iee Circuits, Devices and Systems Series, 12)
June 1, 2001, Institution of Electrical Engineers
Hardcover
in English
0852967780 9780852967782
|
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3
Strained silicon heterostructures: materials and devices
2001, Institution of Electrical Engineers, The Institution of Engineering and Technology
in English
0852967780 9780852967782
|
cccc
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WorldCat
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4
Strained silicon heterostructures: materials and devices
2001, Institution of Electrical Engineers
in English
0852967780 9780852967782
|
zzzz
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WorldCat
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Book Details
First Sentence
"The first transistor invented used elemental germanium as the semiconducting material."
The Physical Object
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- Created April 30, 2008
- 6 revisions
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July 31, 2019 | Edited by MARC Bot | associate edition with work OL12609427W |
August 12, 2010 | Edited by IdentifierBot | added LibraryThing ID |
April 24, 2010 | Edited by Open Library Bot | Fixed duplicate goodreads IDs. |
April 16, 2010 | Edited by bgimpertBot | Added goodreads ID. |
April 30, 2008 | Created by an anonymous user | Imported from amazon.com record |