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The last decade has witnessed an enormous development in the growth of epitaxial layers, hetero structures and superlattices. This progress has created new demands for the characterization of those structures. Various methods have been refined and new ones were developed with the main emphasis on non-destructive in-situ characterization. Among those, methods which rely on the interaction of electromagnetic radiation with matter are particularly valuable.
In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures.
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Edition | Availability |
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1
Optical characterization of epitaxial semiconductor layers
1996, Springer-Verlag
in English
354059129X 9783540591290
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2
Optical Characterization of Epitaxial Semiconductor Layers
1995, Island Press
in English
3642796796 9783642796791
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Includes bibliographical references (p. [393]-422) and index.
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- Created April 1, 2008
- 6 revisions
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