Charge injection properties of Alq3based devices .

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Charge injection properties of Alq3based devi ...
Ranjit Singh Khangura
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Last edited by WorkBot
December 11, 2009 | History

Charge injection properties of Alq3based devices .

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The role of LiF in improving the charge injection in Al/Alq3 based OLEDs is investigated by making and testing the current-voltage characteristics of a series of single carrier devices. It is found that thinner layers of LiF (∼2A) have a greater impact than thicker layers and that LiF has a much greater impact at the top organic/Al interface than at the bottom interface, due to differences caused by the deposition sequence. Charge transport is found to be injection limited, but doesn't quite fit the thermionic emission theory. When used with Ag electrodes, LiF has a blocking effect. Electrically poling Al/LiF/Alq3/LiF/Al devices at -15V results in negative differential resistance peaks in the IN characteristics. These peaks can be erased and reformed and are used as the basis for a new injection model. LiF also improves electron injection in devices having C60 in place of Alq3, through the formation of ohmic contacts.

Publish Date
Language
English
Pages
107

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Cover of: Charge injection properties of Alq3based devices .
Charge injection properties of Alq3based devices .
2005
in English

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Edition Notes

Thesis (M.A.Sc.)--University of Toronto, 2005.

Electronic version licensed for access by U. of T. users.

Source: Masters Abstracts International, Volume: 44-01, page: 0513.

GERSTEIN MICROTEXT copy on microfiche (2 microfiches).

The Physical Object

Pagination
107 leaves.
Number of pages
107

ID Numbers

Open Library
OL20239052M
ISBN 10
049402528X

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January 24, 2010 Edited by WorkBot add more information to works
December 11, 2009 Created by WorkBot add works page