In the silicon heterojunction solar cell, the crystalline silicon (c-Si) surface forms an interface with hydrogenated amorphous silicon (a-Si:H). This thesis reports on the development and evaluation of surface passivation schemes of c-Si with a-Si:H. The passivation consists of a three step process: cleaning of the c-Si surface, etching of the native oxide, and deposition the a-Si:H layer. Evaluation of the passivation schemes was conducted by recombination lifetime measurements using Photocarrier Radiometry (PCR). The SPM, RCA SC1, and SC2 cleaning sequence, followed by either buffered HF, and the growth of the a-Si:H film produced the highest PCR characteristic lifetime (80.9 mus). In the high injection regime, lifetime from PCR correlated with that from mu-PCD within a factor of 1.2 to 2.5. PCR laser annealing of the a-Si:H was observed for laser intensities at or above 2.9 suns. ToF-SIMS measurements identified Na, K, Ca, O, and SiO2 contaminants at the interface.