Cryogenic operation of silicon power devices
by Singh, Ranbir.
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This is the first comprehensive resource of power device electrical characteristics in a cryogenic environment. Using theoretical and experimental knowledge from the literature, temperature dependence of fundamental silicon material parameters like intrinsic carrier concentration, carrier mobilities, lifetimes and bandgap narrowing was identified. The temperature dependent model of avalanche breakdown was developed using experimental data on numerous devices.
A wide range of power devices, each with its own unique features, was chosen for theoretical and experimental analysis. Using these analyses, Schottky diodes, power Mosfets, power BJTs, and power JEETs were optimized in the 300-77K temperature range.
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Cryogenic operation of silicon power devices
1998, Kluwer Academic Publishers
in English
0792381572 9780792381570
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Includes bibliographical references and index.
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- Created April 1, 2008
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| July 14, 2024 | Edited by MARC Bot | import existing book |
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