Properties of advanced semiconductor materials

GaN, AlN, InN, BN, SiC, SiGe

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Last edited by MARC Bot
July 18, 2024 | History

Properties of advanced semiconductor materials

GaN, AlN, InN, BN, SiC, SiGe

  • 0 Ratings
  • 0 Want to read
  • 0 Currently reading
  • 0 Have read

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Publish Date
Publisher
Wiley
Language
English
Pages
194

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Edition Availability
Cover of: Properties of Advanced Semiconductor Materials
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, Sige
2008, Wiley & Sons, Incorporated, John
in English
Cover of: Properties of advanced semiconductor materials

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Book Details


Table of Contents

Gallium nitride (GaN) / V. Bougrov ... [et al.]
Aluminum nitride (AIN) / Yu. Goldberg
Indium nitride (InN) / A. Zubrilov
Boron nitride (BN) / S. Rumyantsev ... [et al.]
Silicon carbide (SiC) / Yu. Goldberg, M. Levinshtein, and S. Rumyantsev
Silicon-germanium (Si[subscript 1-x]Ge[subscript x]) / F. Schäffler

Edition Notes

Includes bibliographical references

Published in
New York

Classifications

Library of Congress
QC611 .P78 2001, QC611.P78 2001

The Physical Object

Pagination
xvii, 194 p. :
Number of pages
194

ID Numbers

Open Library
OL17004896M
ISBN 10
0471358274
LCCN
00042262
OCLC/WorldCat
44174231
Goodreads
4402971

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History

Download catalog record: RDF / JSON / OPDS | Wikipedia citation
July 18, 2024 Edited by MARC Bot import existing book
February 2, 2023 Edited by ImportBot import existing book
September 18, 2021 Edited by ImportBot import existing book
July 28, 2020 Edited by MARC Bot import existing book
September 27, 2008 Created by ImportBot Imported from Miami University of Ohio MARC record