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The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
1979, U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off.
in English
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Book Details
Edition Notes
Includes bibliographical references and index.
"This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation."