The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon

The theoretical and experimental study of the ...
Sheng S. Li, Sheng S. Li
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Last edited by Open Library Bot
December 5, 2010 | History

The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon

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Cover of: The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
1979, U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off.
in English

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Book Details


Edition Notes

Includes bibliographical references and index.
"This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation."

Published in
Washington
Series
Semiconductor measurement technology, NBS special publication ; 400-47, NBS special publication ;, 400-47.

Classifications

Dewey Decimal Class
602/.1 s, 537.6/22
Library of Congress
QC100 .U57 no. 400-47, QC611.6.H6 .U57 no. 400-47

The Physical Object

Pagination
vi, 42 p. :
Number of pages
42

Edition Identifiers

Open Library
OL4734894M
LCCN
78024185
OCLC/WorldCat
4503980

Work Identifiers

Work ID
OL4298865W

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