Design of Shallow p-type Dopants in ZnO (Presentation)
by Su-Huai Wei
ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
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Semiconductor doping, Doped semiconductors, Crystals, DefectsShowing 1 featured edition. View all 1 editions?
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Design of Shallow p-type Dopants in ZnO (Presentation)
2008, United States. Dept. of Energy, distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
electronic resource /
in English
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Edition Notes
Published through the Information Bridge: DOE Scientific and Technical Information.
"May 2008."
Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.
National Renewable Energy Laboratory (NREL), Golden, CO.
DE-AC36-99GO10337
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