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Last edited by ww2archive
December 10, 2015 | History

Semiconductor measurement technology: Permanent Damage Effects Of Nuclear Radiation On The X Band Performance Of Silicon Schottky Barrier Microwave Mixer Diodes 1 edition

Semiconductor measurement technology
Kenney, James M., Institute f ...
About the Book

Abstract: The permanent damage Induced by nuclear radiation In silicon Schottky-barrler X-band microwave mixer diodes was assessed by subjecting separate groups of diodes to 60Co gamma rays and fast neutrons (E > 10 keV) of progressively higher levels, reaching a total gamma dose of 1.7 x lO6 rads(Sl) and & cumulative neutron fluence of 5.5 x 1015 cm-2. Measurements were made at a local oscillator frequency of 9375 MHz to determine changes In conversion Insertion loss, local oscillator return loss and SWR, 1-f output conductance, self-bias, and forward current at one dc bias voltage.

1 edition First published in 1976

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Semiconductor measurement technology: Permanent Damage Effects Of Nuclear Radiation On The X Band Performance Of Silicon Schottky Barrier Microwave Mixer Diodes
1976, Washington : U.S. Dept. of Commerce, National Bureau of Standards, Institute for Applied Technology, Electronic Technology Division : For sale by the Supt. of Docs., U.S. Govt. Print. Off.
in English

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December 10, 2015 Edited by ww2archive added edition
December 10, 2015 Edited by ww2archive added book
December 10, 2015 Created by ww2archive Added new book.