An edition of Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication (1980)

Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication

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Technical impediments to a more effective uti ...
D. R Meyers
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Last edited by WorkBot
January 20, 2010 | History
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An edition of Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication (1980)

Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication

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  • 0 Currently reading
  • 0 Have read

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Publish Date
Publisher
Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt Print. Off.
Language
English
Pages
29

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Subjects
Semiconductor doping, Silicon, Neutron irradiation

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Edition Availability
Cover of: Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication
Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication
1980, Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt Print. Off.
in English
  • Not in Library

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Book Details

Edition Notes

Sponsored by Division of Electric Energy Systems, Department of Energy

Issued May 1980

CODEN : XNBSAV

Includes bibliographical references

Published in
Washington
Series
Semiconductor measurement technology, NBS special publication ; 400-60, NBS special publication -- 400-60

The Physical Object

Pagination
iii, 29 p. ;
Number of pages
29

ID Numbers

Open Library
OL14847067M

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January 20, 2010 Edited by WorkBot add subjects and covers
December 11, 2009 Created by WorkBot add works page