| Record ID | marc_university_of_toronto/uoft.marc:2139758684:873 |
| Source | University of Toronto |
| Download Link | /show-records/marc_university_of_toronto/uoft.marc:2139758684:873?format=raw |
LEADER: 00873cam 22002175a 4500
008 990203s1996 enk b 001 eng
020 $a085296885X
050 $aTK7871.15.G3$bP76 1996
090 08 $aTK 7871.15 .G3P76 1996$bENGI$c1
245 00 $aProperties of gallium arsenide /$cedited by M.R. Brozel and G.E. Stillman.
250 $a3rd edition
260 $aLondon :$bINSPEC,$c1996.
440 0 $aEMIS datareviews series. ;$vno. 16
504 $aIncludes bibliographical references.
650 $aGallium arsenide semiconductors.
710 20 $aINSPEC (Information service)
948 $a02/03/1999$b04/30/1999
039 $fjec
039 $apb/cd
949 $aTK7871.15 .G3 P76 1996$wLC$c1$i31761053720389$d5/9/2006$e17/7/2006$f23/6/2005$g2$lSTACKS$mENGI_CSCI$n15$q8$rY$sY$tBOOK$u28/4/1999
949 $aBAG-3242$wLC$c1$i2427107-2001$lCLOSED_ORD$mCOLL_DEV$rY$sY$tUNKNOWN$u16/10/2002