| Record ID | marc_records_scriblio_net/part27.dat:63460371:1156 |
| Source | Scriblio |
| Download Link | /show-records/marc_records_scriblio_net/part27.dat:63460371:1156?format=raw |
LEADER: 01156cam 2200277 a 4500
001 98009636
003 DLC
005 19980813164321.2
008 980127s1998 paua b 101 0 eng
010 $a 98009636
020 $a1558993878
040 $aDLC$cDLC$dDLC
050 00 $aTK7871.15.N57$bN57 1998
082 00 $a621.3815/2$221
245 00 $aNitride semiconductors :$bsymposium held December 1-5, 1997, Boston, Massachusetts, U.S.A. /$ceditors, F.A. Ponce ... [et al.].
260 $aWarrendale, Pa. :$bMaterials Research Society,$cc1998.
300 $axxxiv, 1224 p. :$bill. ;$c24 cm.
490 1 $aMaterials research Society symposium proceedings ;$vv. 482
500 $aHeld at the 1997 fall meeting of the Materials Research Society in Boston, Dec. 1-5, 1997.
504 $aIncludes bibliographical references and indexes.
650 0 $aNitrides$xCongresses.
650 0 $aWide gap semiconductors$xCongresses.
650 0 $aOptoelectronic devices$xMaterials$xCongresses.
700 1 $aPonce, Fernando A.
710 2 $aMaterials Research Society.$bMeeting$d(1997 :$cBoston, Mass.)
830 0 $aMaterials Research Society symposia proceedings ;$v482.