| Record ID | marc_records_scriblio_net/part14.dat:171779509:816 |
| Source | Scriblio |
| Download Link | /show-records/marc_records_scriblio_net/part14.dat:171779509:816?format=raw |
LEADER: 00816cam 2200241 a 4500
001 2003283093
003 DLC
005 20040130141633.0
008 031117s1999 nyua b 001 0 eng
010 $a 2003283093
020 $a0195170148 (alk. paper)
040 $aDLC$cDLC$dDLC
050 00 $aTK7871.99.M44$b.T77 1999b
082 00 $a621.3815/284$222
100 1 $aTsividis, Yannis.
245 10 $aOperation and modeling of the MOS transistor /$cYannis Tsividis.
246 3 $aMOS transistor
250 $a2nd ed.
260 $aNew York :$bOxford University Press,$cc1999.
300 $axx, 620 p. :$bill. ;$c25 cm.
504 $aIncludes bibliographical references and index.
650 0 $aMetal oxide semiconductors$xMathematical models.
650 0 $aMetal oxide semiconductor field-effect transistors$xMathematical models.