| Record ID | marc_records_scriblio_net/part13.dat:158521812:925 |
| Source | Scriblio |
| Download Link | /show-records/marc_records_scriblio_net/part13.dat:158521812:925?format=raw |
LEADER: 00925cam 2200289 a 4500
001 2001274690
003 DLC
005 20010718181710.0
008 010220s2000 ne a b 001 0 eng
010 $a 2001274690
015 $aGBA1-03807
020 $a0444506306 (alk. paper)
035 $a(OCoLC)ocm45682420
040 $aUKM$cUKM$dDLC
042 $alccopycat
050 00 $aTK7871.15.N57$bA13 2000
082 00 $a621.3815/2$221
245 00 $aIII-nitride semiconductors :$belectrical, structural, and defects properties /$ceditor, Omar Manasreh.
246 3 $a3-nitride semiconductors
246 3 $aThree-nitride semiconductors
260 $aAmsterdam ;$aNew York :$bElsevier,$c2000.
300 $axiv, 448 p. :$bill. ;$c25 cm.
504 $aIncludes bibliographic references and index.
650 0 $aNitrides.
650 0 $aElectric conductivity.
650 0 $aSemiconductors$xMaterials.
700 1 $aManasreh, Mahmoud Omar.