| Record ID | marc_records_scriblio_net/part11.dat:97584346:1124 |
| Source | Scriblio |
| Download Link | /show-records/marc_records_scriblio_net/part11.dat:97584346:1124?format=raw |
LEADER: 01124cam 2200265 i 4500
001 79000395
003 DLC
005 19990716000000.0
008 790116s1979 nyua b 101 0 eng
010 $a 79000395
020 $a030640155X
020 $z0316507113
020 $z0316507105 (pbk.) :$c$7.95
040 $aDLC$cDLC$dDLC
050 00 $aQC611.6.D6$bI57 1978
082 00 $a621.3815/2
111 2 $aInternational Conference on Neutron Transmutation Doping in Semiconductors,$b2d,$cUniversity of Missouri,$d1978.
245 10 $aNeutron transmutation doping in semiconductors :$b[proceedings of the Second International Conference on Neutron Transmutation Doping in Semiconductors, held at the University of Missouri, Columbia, Missouri, April 23-26, 1978] /$cedited by Jon M. Meese.
260 $aNew York :$bPlenum Press,$cc1979.
300 $ax, 371 p. :$bill. ;$c26 cm.
504 $aIncludes bibliographical references and index.
650 0 $aSemiconductor doping, Neutron transmutation$xCongresses.
650 0 $aNeutron irradiation$xCongresses.
650 0 $aSilicon$xDefects$xCongresses.
700 1 $aMeese, Jon M.