| Record ID | marc_oregon_summit_records/catalog_files/washs02192008.mrc_revrev.mrc:892094726:931 |
| Source | Oregon Libraries |
| Download Link | /show-records/marc_oregon_summit_records/catalog_files/washs02192008.mrc_revrev.mrc:892094726:931?format=raw |
LEADER: 00931nam a2200265 a 4500
001 29739312
005 19950727075409.6
008 s1991 waua b 000 0 eng d
035 $aWSU000744801
040 $aWaPS$cWaPS$dWaOLN
100 1 $aMaxson, Michael Freeman,$d1965-
245 10 $aElectronic properties of metalorganic chemical vapor deposition grown AlxGa₁-xAs /$cby Michael Freeman Maxson.
260 $c1991.
300 $aix, 100 leaves, bound :$bill. ;$c29 cm.
500 $aTypescript.
502 $aThesis (M.S.)--Washington State University, 1991.
504 $aIncludes bibliographical references (leaves 89-90).
590 $aWSU:"Department of Mechanical and Materials Engineering."
650 0 $aGallium arsenide semiconductors.
907 $a.b20064214$bmulti$c-
902 $a070705
998 $b2$c950717$dm$ea$f-$g0
940 $lWC$lWO
945 $lwc $aWSU M3 1991 M32
945 $lwos $aWSU M3 1991 M32