| Record ID | marc_loc_updates/v39.i28.records.utf8:13615859:1336 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_updates/v39.i28.records.utf8:13615859:1336?format=raw |
LEADER: 01336nam a22003377a 4500
001 2011377642
003 DLC
005 20110709094910.0
008 110705s2010 waua b 100 0 eng d
010 $a 2011377642
020 $a9780819479983 (pbk.)
020 $a0819479985 (pbk.)
035 $a(OCoLC)ocn645653232
040 $aYDXCP$cYDXCP$dCAI$dDLC
042 $alccopycat
050 00 $aTK7871.15.G33$bG35 2010
082 00 $a621.381/045$223
245 00 $aGallium nitride materials and devices V :$b25-28 January 2010, San Francisco, California, United States /$cJen-Inn Chyi ... [et al.], editors ; sponsored and published by SPIE.
246 3 $aGallium nitride materials and devices 5
246 3 $aGallium nitride materials and devices five
260 $aBellingham, Wash. :$bSPIE,$cc2010.
300 $a1 v. (various pagings) :$bill. ;$c28 cm.
490 1 $aProceedings of SPIE,$x0277-786X ;$vv. 7602
504 $aIncludes bibliographical references.
650 0 $aGallium nitride$xOptical properties$vCongresses.
650 0 $aOptoelectronic devices$xMaterials$vCongresses.
650 0 $aSemiconductors$vCongresses.
650 0 $aQuantum dots$vCongresses.
700 1 $aChyi, Jen-Inn.
710 2 $aSPIE (Society)
830 0 $aProceedings of SPIE--the International Society for Optical Engineering ;$vv. 7602.$x0277-786X