| Record ID | marc_loc_updates/v36.i42.records.utf8:5037018:1337 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_updates/v36.i42.records.utf8:5037018:1337?format=raw |
LEADER: 01337cam a22003617a 4500
001 2005926297
003 DLC
005 20081015070345.0
008 050421s2005 nyua f b 001 0 eng
010 $a 2005926297
015 $aGBA507555$2bnb
016 7 $a013093340$2Uk
020 $a1852339357 (hbk.)
020 $a9781852339357
035 $a(OCoLC)ocm57528558
040 $aUKM$cUKM$dBAKER$dOHX$dBGU$dIXA$dDLC
042 $alccopycat
050 00 $aTK7871.15.G33$bP43 2006
082 00 $a621.3815/2$222
100 1 $aPearton, S. J.
245 10 $aGallium nitride processing for electronics, sensors, and spintronics /$cStephen J. Pearton, Cammy R. Abernathy, and Fan Ren.
260 $aNew York :$bSpringer,$cc2006.
300 $axii, 374 p. :$bill. ;$c25 cm.
440 0 $aEngineering materials and processes
504 $aIncludes bibliographical references and index.
650 0 $aSemiconductors.
650 0 $aGallium nitride.
650 0 $aDetectors$xMaterials.
700 1 $aAbernathy, C. R.
700 1 $aRen, Fan.
856 41 $3Table of contents$uhttp://www.loc.gov/catdir/toc/fy0607/2005926297.html
856 42 $3Publisher description$uhttp://www.loc.gov/catdir/enhancements/fy0625/2005926297-d.html
856 42 $3Contributor biographical information$uhttp://www.loc.gov/catdir/enhancements/fy0823/2005926297-b.html