MARC Record from Library of Congress

LEADER: 02826cam a22004337a 4500
001 2013427739
003 DLC
005 20140203120507.0
008 130827s2011 enka b 001 0 eng d
010 $a 2013427739
016 7 $a015802123$2Uk
020 $a9781845696894
020 $a1845696891
035 $a(OCoLC)ocn666239787
040 $aBTCTA$beng$cBTCTA$dYDXCP$dCDX$dDEBBG$dBWX$dTXA$dUKMGB$dS4S$dDLC
042 $alccopycat
050 00 $aTA418.9.N35$bS555 2011
050 14 $aT174.7$b.S55 2011
082 04 $a621.3815$222
245 00 $aSilicon-germanium (SiGe) nanostructures :$bproduction, properties and applications in electronics /$cedited by Yasuhiro Shiraki and Noritaka Usami.
260 $aCambridge, UK :$bPhiladelphia, PA :$bWoodhead Publishing,$c2011.
300 $axx, 627 p. :$bill. ;$c24 cm.
490 1 $aWoodhead Publishing in materials
504 $aIncludes bibliographical references and index.
520 8 $aAnnotation$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices.Silicon-germanium (SiGe) nanostructuresreviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapor deposition. This part also includes chapters covering strain engineering and modeling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices --$cSource other than Library of Congress.
650 0 $aNanostructured materials.
650 0 $aSilicon alloys.
650 0 $aGermanium alloys.
650 0 $aElectronic circuits.
650 0 $aNanoelectronics.
650 07 $aGermaniumverbindungen.$2swd
650 07 $aNanostrukturiertes Material.$2swd
650 07 $aSiliciumhalbleiter.$2swd
700 1 $aShiraki, Yasuhiro,$d1942-
700 1 $aUsami, Noritaka.
830 0 $aWoodhead Publishing in materials.
856 42 $3Contributor biographical information$uhttp://www.loc.gov/catdir/enhancements/fy1402/2013427739-b.html
856 42 $3Publisher description$uhttp://www.loc.gov/catdir/enhancements/fy1402/2013427739-d.html
856 41 $3Table of contents only$uhttp://www.loc.gov/catdir/enhancements/fy1402/2013427739-t.html