| Record ID | marc_loc_2016/BooksAll.2016.part41.utf8:279402504:1934 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part41.utf8:279402504:1934?format=raw |
LEADER: 01934cam a22004697a 4500
001 2014395719
003 DLC
005 20140830083558.0
008 140804s2001 enka 001 0 eng
010 $a 2014395719
015 $aGBA0V2612$2bnb
016 7 $a010350839$2Uk
020 $a9780852967782
020 $a0852967780
035 $a(OCoLC)ocm45351181
040 $aUKM$beng$cUKM$dIXA$dC#P$dUNA$dBAKER$dYDXCP$dOCLCG$dSTF$dDEBBG$dOCLCO$dOCLCF$dDLC
042 $alccopycat
050 00 $aQC611.8.S5$bS77 2001
082 04 $a621.38152$221
082 04 $a620.193$221
084 $aRL 624$2blsrissc
084 $aELT 329f$2stub
084 $aPHY 687f$2stub
084 $aUP 3150$2rvk
245 00 $aStrained silicon heterostructures :$bmaterials and devices /$cedited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray.
260 $aLondon :$bInstitution of Electrical Engineers,$cc2001.
300 $axii, 496 p. :$bill. ;$c25 cm.
490 1 $aIEE circuits, devices and systems series$v12
504 $aIncludes bibliographical references and index.
505 0 $aIntroduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics.
650 0 $aHeterostructures.
650 0 $aSilicon.
650 7 $aHeterostructures.$2fast
650 7 $aSilicon.$2fast
650 07 $aHeterostruktur.$2swd
650 07 $aSilicium.$2swd
700 1 $aMaiti, C. K.
700 1 $aChakrabarti, N. B.
700 1 $aRay, S. K.,$cDr.
710 2 $aInstitution of Electrical Engineers.
776 08 $iOnline version:$tStrained silicon heterostructures.$dLondon : Institution of Electrical Engineers, c2001$w(OCoLC)606912463
830 0 $aIEE circuits, devices and systems series ;$v12.