| Record ID | marc_loc_2016/BooksAll.2016.part39.utf8:170240808:1411 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part39.utf8:170240808:1411?format=raw |
LEADER: 01411cam a22003857i 4500
001 2011945807
003 DLC
005 20150609080050.0
008 111220s2012 caua b 001 0 eng d
010 $a 2011945807
020 $a9781588832504 (v. 1 : hbk.)
020 $a1588832503 (v. 1 : hbk.)
020 $a9781588832511 (v. 2 : hbk.)
020 $a1588832511 (v. 2 : hbk.)
020 $a9781588832498 (set)
020 $a158883249X (set)
035 $a(OCoLC)ocn795299760
040 $aCKZ$beng$cCKZ$dCKZ$dYDXCP$dBWX$dTXA$dOCLCF$dOCLCQ$dDLC
042 $alccopycat
050 00 $aTK7895.M4$bN62 2012
082 00 $a621.39/732$223
245 00 $aNonvolatile memories :$bmaterials, device and applications /$cedited by Tseung-Yuen Tseng, Simon Min Sze, National Chiao Tung University, Taiwan.
264 1 $aStevenson Ranch, California, USA :$bAmerican Scientific Publishers,$c[2012]
264 0 $c©2012
300 $a2 volumes :$billustrations ;$c29 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
338 $avolume$bnc$2rdacarrier
490 1 $aNanotechnology book series
504 $aIncludes bibliographical references and index.
650 0 $aNonvolatile random-access memory.
650 7 $aNonvolatile random-access memory.$2fast$0(OCoLC)fst01894791
700 1 $aTseng, Tseung-Yuen.
700 1 $aSze, S. M.,$d1936-
830 0 $aNanotechnology book series.