| Record ID | marc_loc_2016/BooksAll.2016.part31.utf8:175177767:1046 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part31.utf8:175177767:1046?format=raw |
LEADER: 01046cam a22002774a 4500
001 2004042933
003 DLC
005 20080308091803.0
008 040203s2004 gw a b 001 0 eng
010 $a 2004042933
020 $a3540206663 (alk. paper)
040 $aDLC$cDLC$dDLC
042 $apcc
050 00 $aTK7871.15.S56$bS53 2004
082 00 $a621.3815/2$222
245 00 $aSiC power materials :$bdevices and applications /$cZ.C. Feng, ed.
260 $aBerlin ;$aNew York :$bSpringer,$cc2004.
300 $axix, 450 p. :$bill. ;$c25 cm.
490 1 $aSpringer series in materials science,$x0933-033X ;$v73
504 $aIncludes bibliographical references and index.
650 0 $aSilicon carbide$xElectric properties.
650 0 $aSemiconductors.
700 1 $aFeng, Zhe Chuan.
830 0 $aSpringer series in materials science ;$vv. 73.
856 42 $3Publisher description$uhttp://www.loc.gov/catdir/enhancements/fy0817/2004042933-d.html
856 41 $3Table of contents only$uhttp://www.loc.gov/catdir/enhancements/fy0817/2004042933-t.html