| Record ID | marc_loc_2016/BooksAll.2016.part29.utf8:199027503:728 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part29.utf8:199027503:728?format=raw |
LEADER: 00728cam a22002414a 4500
001 2002038276
003 DLC
005 20030213151359.0
008 021025s2003 maua b 001 0 eng
010 $a 2002038276
020 $a1580533612 (alk. paper)
040 $aDLC$cDLC$dDLC
042 $apcc
050 00 $aTK7871.96.B55$bC74 2002
082 00 $a621.3815/28$221
100 1 $aCressler, John D.
245 10 $aSilicon-germanium heterojunction bipolar transistors /$cJohn D. Cressler, Guofu Niu.
260 $aBoston, MA :$bArtech House,$c2003.
300 $axviii, 570 p. :$bill ;$c24 cm.
504 $aIncludes bibliographical references and index.
650 0 $aBipolar transistors.
650 0 $aGermanium.
700 1 $aNiu, Guofu.