| Record ID | marc_loc_2016/BooksAll.2016.part24.utf8:153940693:1398 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part24.utf8:153940693:1398?format=raw |
LEADER: 01398nam a2200349 a 4500
001 95118625
003 DLC
005 19970103131852.6
008 950221s1994 gw a b 000 0 eng d
010 $a 95118625
020 $a3891918364
035 $a(OCoLC)32196745
040 $aARaS$cARaS$dDLC
041 0 $aengger
042 $alccopycat
050 00 $aQC585.7.L6$bH47 1994
100 1 $aHerrmann, Martin.
245 10 $aCharge loss modeling for EPROMs with ONO interpoly dielectric /$cMartin R. Herrmann.
250 $a1. Aufl.
260 $aKonstanz, [Germany] :$bHartung-Gorre Verlag,$c1994.
300 $a101 p. :$bill. ;$c21 cm.
490 1 $aSeries in microelectronics,$x0936-5362 ;$vvolume 42
500 $a"Nachdruck der Diss. ETH Nr. 10817"--T.p. verso.
504 $aIncludes bibliographical references (p. 91-99).
500 $aZurich, Techn. Hochsch., Dissertation, 1994.
520 $a"The investigations presented in this work identify the origin of intrinsic long term charge loss in EPROMs with ONO interploy dielectric and model the charge transport through the ONO dielectric as a function of electric field and temperature"--Abstract.
500 $aAbstract in English and German.
650 0 $aDielectric loss.
650 0 $aCharge transfer.
650 0 $aMicroelectronics.
650 0 $aComputer storage devices.
830 0 $aSeries in microelectronics ;$vv. 42.