| Record ID | marc_loc_2016/BooksAll.2016.part13.utf8:65959502:1253 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part13.utf8:65959502:1253?format=raw |
LEADER: 01253cam a2200289 i 4500
001 80600047
003 DLC
005 19850329000000.0
008 820105s1980 dcu b f00010 eng
010 $a 80600047 //r852
020 $c$2.00 (pbk.)
050 0 $aQC100$b.U57 no. 400-60$aTK7871.85
082 0 $a602/.18 s$a621.3815/287$219
100 10 $aMyers, D. R.$q(David R.)
245 10 $aTechnical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication /$cD.R. Myers ; sponsored by Division of Electric Energy Systems, Department of Energy.
260 0 $aWashington, D.C. :$bU.S. Dept. of Commerce, National Bureau of Standards :$bfor sale by the Supt. of Docs., U.S. Govt. Print. Off.,$c1980.
300 $aiii, 29 p. ;$c26 cm.
490 1 $aNational Bureau of Standards Special publication ;$v400-60
490 1 $aSemiconductor measurement technology
500 $a"Issued May 1980."
504 $aIncludes bibliographical references.
650 0 $aSemiconductor doping, Neutron transmutation.
650 0 $aSilicon$xDefects.
650 0 $aPower semiconductors.
650 0 $aThyristors.
830 0 $aNBS special publication ;$v400-60.
830 0 $aSemiconductor measurement technology.