MARC Record from marc_columbia

LEADER: 07681cam a2200757 i 4500
001 16870756
005 20221105231333.0
006 m o d
007 cr cnu---unuuu
008 190810s2019 dk a ob 001 0 eng d
035 $a(OCoLC)on1109817429
035 $a(NNC)16870756
040 $aEBLCP$beng$erda$epn$cEBLCP$dOCLCQ$dEBLCP$dYDX$dYDXIT$dOCLCF$dOCLCQ$dCUI$dOCL$dESU$dOCLCQ$dOCLCO$dTYFRS
019 $a1109773157$a1109974631
020 $a9788770221115$q(electronic book)
020 $a8770221111$q(electronic book)
020 $a9781003338994$q(electronic bk.)
020 $a1003338992$q(electronic bk.)
020 $a9781000792850$q(electronic bk. : PDF)
020 $a1000792854$q(electronic bk. : PDF)
020 $a9781000796391$q(electronic bk. : EPUB)
020 $a1000796396$q(electronic bk. : EPUB)
020 $z877022112X
020 $z9788770221122$q(hardcover)
024 7 $a10.1201/9781003338994$2doi
035 $a(OCoLC)1109817429$z(OCoLC)1109773157$z(OCoLC)1109974631
037 $a9781003338994$bTaylor & Francis
050 4 $aTK7871.85$b.R86 2019
072 7 $aSCI$x024000$2bisacsh
072 7 $aTEC$x019000$2bisacsh
072 7 $aTJF$2bicssc
082 04 $a621.3815/2$223
049 $aZCUA
100 1 $aRumiantsev, Andrej,$eauthor.
245 10 $aOn-wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond /$cAndrej Rumiantsev.
264 1 $aGistrup, Denmark :$bRiver Publishers,$c[2019]
300 $a1 online resource :$billustrations
336 $atext$btxt$2rdacontent
337 $acomputer$bc$2rdamedia
338 $aonline resource$bcr$2rdacarrier
490 1 $aRiver Publishers series in electronic materials and devices
504 $aIncludes bibliographical references and index.
505 0 $aFront Cover; Half Title; RIVER PUBLISHERS SERIES IN ELECTRONIC MATERIALS AND DEVICES; Title -- On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond; Copyright; Contents; Preface and Acknowledgments; List of Figures; List of Tables; List of Abbreviations; PART I -- Development and Implementation; Chapter 1 -- Motivation; 1.1 Advances in Silicon Technologies for mm-Wave Applications; 1.2 Challenges of RF Characterization of Advanced Devices; 1.3 Contribution of This Work; Chapter 2 -- Introduction
505 8 $a2.1 S-parameters of a Linear Network2.2 Theory of a Uniform Waveguide Mode; 2.2.1 Waveguide Voltage and Current; 2.2.2 Power; 2.2.3 Characteristic Impedance; 2.2.4 Equivalent Circuit Representation of Transmission Line; 2.2.5 Effective Permittivity and Measurement of Characteristic Impedance; 2.3 Waveguide Circuit Theory; 2.3.1 Traveling Wave; 2.3.2 Pseudo-Waves; 2.3.3 Scattering and Pseudo-Scattering Matrices; 2.3.4 The Cascade Matrix; 2.3.5 Change of Reference Impedance; 2.3.6 Two-Port Reference Impedance Transformation; 2.3.7 Load Impedance; 2.4 S-parameter Measurement
505 8 $a2.5 Systematic Measurement Errors and S-parameter Calibration2.6 S-parameter Measurements at the Wafer Level; 2.6.1 Design of Modern Wafer Probes; 2.6.2 DUT Contact Pads and BEOL Parasitics; 2.6.3 Calibration Standards; Chapter 3 -- Development of Calibration Solutions; 3.1 Requirements; 3.2 Calibration of a Two-Port VNA; 3.3 Transfer TMR Solution; 3.3.1 Notes on Calibration Reference Impedance; 3.3.2 Calibration with a Thru of a Finite Length; 3.3.3 Notes on the Probe-Tip Reflection Standards; 3.4 Verification of the Transfer TMR; 3.5 Multiport Calibration; 3.6 Conclusion
505 8 $aChapter 4 -- Design of On-Wafer Calibration Standards4.1 Design Tradeoff; 4.2 Design of RF Contact Pad and Device Interface; 4.3 Location of the Reference Plane; 4.4 Calibration Standards; 4.4.1 Thru and Line; 4.4.2 Short; 4.4.3 Load; 4.5 De-Embedding Elements; 4.5.1 Pad Open and Pad Short; 4.5.2 Probe Short; 4.5.3 Complete Open and Complete Short; 4.6 Calibration Standards and De-Embedding Elements Implemented in the IHP BiCMOS SiGe:C Process; 4.7 Calibration Standards Implemented in IBM RF CMOS 8SF Process; Chapter 5 -- Electrical Properties of Custom Standards
505 8 $a5.1 Multiline TRL and Transfer TMR Requirements5.2 Measurement of the Characteristic Impedance of the Line; 5.3 Establishing the Reference for the Calibration Comparison Method; 5.3.1 NIST GaAs Reference Material RM8130; 5.3.2 Commercial Alumina Substrate as the Reference; 5.4 Results of Measurement of the Characteristic Impedance of the Line; 5.4.1 IBM Advanced RF CMOS 8SF Process; 5.4.2 STMicroelectronics' BiCMOS9MMW Process; 5.5 Definition of the Load Impedance; 5.5.1 Measurement Method; 5.5.2 EM Simulation of the Load Reactance
500 $a5.5.3 Two-Step De-Embedding for Measurement of Load Reactance
588 0 $aOnline resource; title from digital title page (viewed on September 10, 2019).
520 $aThe increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: * Specifics of S-parameter measurements of planar structures * Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms * Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes * Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results * Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters * New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.
545 0 $aAndrej Rumiantsev
650 0 $aSemiconductors$xCharacterization.
650 0 $aSemiconductor wafers.
650 0 $aSemiconductors$xCalibration.
650 6 $aSemi-conducteurs$xCaractérisation.
650 6 $aPlaquettes à gravure en semi-conducteurs.
650 6 $aSemi-conducteurs$xÉtalonnage.
650 7 $aSemiconductor wafers.$2fast$0(OCoLC)fst01112189
650 7 $aSemiconductors$xCharacterization.$2fast$0(OCoLC)fst01112202
650 7 $aSCIENCE / Energy$2bisacsh
650 7 $aTECHNOLOGY / Lasers$2bisacsh
655 4 $aElectronic books.
776 08 $iPrint version:$aRumiantsev, Andrej.$tOn-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range.$dAalborg : River Publishers, ©2019$z9788770221122
830 0 $aRiver Publishers series in electronic materials and devices.
856 40 $uhttp://www.columbia.edu/cgi-bin/cul/resolve?clio16870756$zTaylor & Francis eBooks
852 8 $blweb$hEBOOKS