| Record ID | marc_columbia/Columbia-extract-20221130-031.mrc:91065519:3750 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-031.mrc:91065519:3750?format=raw |
LEADER: 03750cam a2200649Ma 4500
001 15083349
005 20220528231833.0
006 m o d
007 cr cn|||||||||
008 111202s2012 si a ob 000 0 eng d
035 $a(OCoLC)ocn769189634
035 $a(NNC)15083349
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020 $a9789814303088$q(electronic bk.)
020 $a9814303089$q(electronic bk.)
020 $a9814303070
020 $a9789814303071
020 $z9789814303071
024 7 $a10.1201/b11410$2doi
035 $a(OCoLC)769189634$z(OCoLC)794216600$z(OCoLC)879653114$z(OCoLC)992022164$z(OCoLC)994692177$z(OCoLC)1031047412$z(OCoLC)1086458810
037 $aCL0500000428$bSafari Books Online
050 4 $aTK7871.95$b.O37 2012eb
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072 7 $aCOM$x067000$2bisacsh
072 7 $aCOM$x037000$2bisacsh
082 04 $a621.39732$222
049 $aZCUA
100 1 $aOhsawa, Takashi.
245 10 $aFloating body cell :$ba novel capacitor-less DRAM cell /$cTakashi Ohsawa, Takeshi Hamamoto.
260 $a[Singapore] :$bPan Stanford ;$aBoca Raton, FL :$bCRC Press,$c©2012.
300 $a1 online resource (ix, 248 pages) :$billustrations
336 $atext$btxt$2rdacontent
337 $acomputer$bc$2rdamedia
338 $aonline resource$bcr$2rdacarrier
347 $adata file$2rda
504 $aIncludes bibliographical references.
588 0 $aPrint version record.
505 0 $aCh. 1. Introduction -- ch. 2. Concept of floating body cell and its operational principle -- ch. 3. Signal of floating body cell -- ch. 4. 128 Mbit floating body RAM on silicon-on-insulator -- ch. 5. Scaling of floating body cell -- ch. 6. Cell array architecture and sense amplifier design -- ch. 7. Design practices of floating body random access memory -- ch. 8. Floating body cell development activities and future directions.
520 $aDRAM together with NAND Flash is driving semiconductor technologies with wide spectrum of usage ranging from PC, mobile phone and digital home appliances to solid-state disk (SSD). However, the DRAM cell which consists of a data storage capacitor (1C) and a switching transistor (1T) is facing serious difficulty in shrinking the size of the capacitor whose capacitance needs to be kept almost constant (20~30fF) throughout generations. The availability of a new DRAM cell which does not rely on an explicit capacitor for storing its data is more than ever awaited for further increasing the bit dens.
650 0 $aMetal oxide semiconductor field-effect transistors.
650 0 $aSemiconductor storage devices.
650 6 $aTransistors MOSFET.
650 6 $aOrdinateurs$xMémoires à semi-conducteurs.
650 7 $aCOMPUTERS$xComputer Engineering.$2bisacsh
650 7 $aCOMPUTERS$xHardware$xGeneral.$2bisacsh
650 7 $aCOMPUTERS$xMachine Theory.$2bisacsh
650 7 $aMetal oxide semiconductor field-effect transistors.$2fast$0(OCoLC)fst01017614
650 7 $aSemiconductor storage devices.$2fast$0(OCoLC)fst01112182
655 0 $aElectronic books.
655 4 $aElectronic books.
700 1 $aHamamoto, Takeshi.
776 08 $iPrint version:$aOhsawa, Takashi.$tFloating body cell.$dSingapore : Pan Stanford, ©2012$z9789814303071$w(OCoLC)768066976
856 40 $uhttp://www.columbia.edu/cgi-bin/cul/resolve?clio15083349$zTaylor & Francis eBooks
852 8 $blweb$hEBOOKS