MARC Record from marc_columbia

LEADER: 03269cam a2200673 i 4500
001 15132554
005 20210607144400.0
006 m o d
007 cr |n|||||||||
008 180516r20181988flu ob 001 0 eng d
035 $a(OCoLC)on1035749015
035 $a(NNC)15132554
040 $aYDX$beng$epn$cYDX$dN$T$dOCLCF$dNLE$dUKMGB$dUWO$dOTZ$dTYFRS$dOCLCQ
015 $aGBB897682$2bnb
016 7 $a018882174$2Uk
019 $a1036205055
020 $a9781351076623$q(electronic bk.)
020 $a1351076620$q(electronic bk.)
020 $a9781351093521
020 $a1351093525
020 $a9781351085076$q(PDF ebook)
020 $a1351085077$q(PDF ebook)
020 $a9781351101974$q(Mobipocket ebook)
020 $a1351101978$q(Mobipocket ebook)
020 $z1315897520
020 $z9781315897523
024 7 $a10.1201/9781351076623$2doi
035 $a(OCoLC)1035749015$z(OCoLC)1036205055
037 $a9781351093521$bIngram Content Group
050 4 $aQC611.6.M64
072 7 $aSCI$x021000$2bisacsh
072 7 $aSCI$x022000$2bisacsh
082 04 $a537.622$223
049 $aZCUA
245 00 $aSilicon-molecular beam epitaxy.$nVolume II /$ceditors, Erich Kasper, John C. Bean.
260 $aBoca Raton, FL :$bCRC Press, Taylor & Francis Group,$c[2018]
300 $a1 online resource
336 $atext$btxt$2rdacontent
337 $acomputer$bc$2rdamedia
338 $aonline resource$bcr$2rdacarrier
490 1 $aCRC revivals
500 $aOriginally published 1988 by CRC Press.
504 $aIncludes bibliographical references and index.
588 0 $aOnline resource; title from PDF title page (EBSCO, viewed May 21, 2018).
505 0 $a9. Principles of Heteroepitaxy 10. Epitaxial Silicides 11. Silicon-Based Semiconductor Heterostructures 12. Assessment of Layers 13. Industrial Application: Perspective and Requirements 14. Industrial Application: Possible Approaches 15. Molecular Beam Epitaxy of Silicon Materials: A Bibliography 1962 -- 1985.
520 3 $aThis subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
650 0 $aMolecular beam epitaxy.
650 0 $aSilicon.
650 7 $aSCIENCE$xPhysics$xElectricity.$2bisacsh
650 7 $aSCIENCE$xPhysics$xElectromagnetism.$2bisacsh
650 7 $aMolecular beam epitaxy.$2fast$0(OCoLC)fst01024729
650 7 $aSilicon.$2fast$0(OCoLC)fst01118631
655 4 $aElectronic books.
700 1 $aKasper, Erich.
700 1 $aBean, John C.$q(John Condon),$d1950-
776 08 $iPrint version:$z1315897520$z9781315897523$w(OCoLC)1027826767
830 0 $aCRC revivals.
856 40 $uhttp://www.columbia.edu/cgi-bin/cul/resolve?clio15132554$zTaylor & Francis eBooks
852 8 $blweb$hEBOOKS