| Record ID | marc_columbia/Columbia-extract-20221130-019.mrc:80496963:855 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-019.mrc:80496963:855?format=raw |
LEADER: 00855cam a2200265Ma 4500
001 9233183
005 20120418212647.0
008 110321s2012 si a b 001 0 eng d
020 $a9789814303071 (hbk.)
020 $a9814303070 (hbk.)
024 $a40020175590
035 $a(OCoLC)ocn768066976
035 $a(OCoLC)768066976
035 $a(NNC)9233183
040 $aUKMGB$cUKMGB$dIUP
050 14 $aTK7895.M4$bO373 2012
082 04 $a621.39732$222
100 1 $aOhsawa, Takashi.
245 10 $aFloating body cell :$ba novel capacitor-less dram cell /$cTakashi Ohsawa, Takeshi Hamamoto.
260 $aSingapore :$bPan Stanford,$cc2012.
300 $aix, 254 p. :$bill. ;$c24 cm.
504 $aIncludes bibliographical references and index.
650 0 $aSemiconductor storage devices.
700 1 $aHamamoto, Takeshi.
852 00 $boff,eng$hTK7895.M4$iO373 2012g