MARC Record from marc_columbia

LEADER: 02196pam a22003374a 4500
001 4265156
005 20221102192451.0
008 030909s2004 nyua b 001 0 eng
010 $a 2003019997
020 $a1591690234 (hardcover : alk. paper)
035 $a(OCoLC)ocm53006909
035 $a(NNC)4265156
035 $a4265156
040 $aDLC$cDLC$dYDX$dOrLoB-B
042 $apcc
050 00 $aTP261.C3$bS45 2004
082 00 $a621.3815/2$222
245 00 $aSilicon carbide :$bmaterials, processing, and devices /$cedited by Zhe Chuan Feng and Jian H. Zhao.
260 $aNew York :$bTaylor & Francis,$c2004.
300 $ax, 389 pages :$billustrations ;$c24 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
490 1 $aOptoelectronic properties of semiconductors and superlattices ;$vv. 20
504 $aIncludes bibliographical references and index.
505 00 $g1.$tEpitaxial Growth of High-Quality Silicon Carbide: Fundamentals and Recent Progress /$rT. Kimoto and H. Matsunami -- $g2.$tSurface Characterization of 6H-SiC Reconstructions /$rKian-Ping Loh, Eng-Soon Tok and Andrew T. S. Wee -- $g3.$tExciton and Defect Photoluminescence from SiC /$rT. Egilsson, I. G. Ivanov, N. T. Son, A. Henry, J. P. Bergman and E. Janzen -- $g4.$tDeep-Level Defects in SiC Materials and Devices /$rA. A. Lebedev -- $g5.$tIon-Implantation in SiC /$rMulpuri V. Rao -- $g6.$tOhmic Contacts to SiC for High Power Temperature Device Applications /$rM. W. Cole and P. C. Joshi -- $g7.$tSiC Avalanche Breakdown and Avalanche Photodiodes /$rFeng Yan and Jian H. Zhao -- $g8.$tPorous SiC Technology /$rStephen E. Saddow, Marina Mynbaeva and Michael E. MacMillan.
650 0 $aSilicon carbide.$0http://id.loc.gov/authorities/subjects/sh85122519
650 0 $aSilicon carbide$xElectric properties.$0http://id.loc.gov/authorities/subjects/sh85122520
700 1 $aFeng, Zhe Chuan.$0http://id.loc.gov/authorities/names/n92046733
700 1 $aZhao, Jian H.$0http://id.loc.gov/authorities/names/n98061428
830 0 $aOptoelectronic properties of semiconductors and superlattices ;$vv. 20.$0http://id.loc.gov/authorities/names/no97039806
852 00 $boff,eng$hTP261.C3$iS45 2004