| Record ID | marc_columbia/Columbia-extract-20221130-004.mrc:620592295:2025 |
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LEADER: 02025fam a2200349 a 4500
001 1983835
005 20220609043039.0
008 970130t19971997gw a b 001 0 eng
010 $a 97003755
020 $a3540615903 (alk. paper)
035 $a(OCoLC)36315945
035 $a(OCoLC)ocm36315945
035 $9AMK3170CU
035 $a(NNC)1983835
035 $a1983835
040 $aDLC$cDLC$dDLC$dOrLoB-B
050 00 $aTA1700$b.N35 1997
082 00 $a621.36/6$221
100 1 $aNakamura, Shuji,$d1954-$0http://id.loc.gov/authorities/names/n97010137
245 14 $aThe blue laser diode :$bGaN based light emitters and lasers /$cShuji Nakamura, Gerhard Fasol.
260 $aBerlin ;$aNew York :$bSpringer,$c[1997], ©1997.
300 $axvi, 343 pages :$billustrations (some color) ;$c24 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
504 $aIncludes bibliographical references (p. [319]-333) and index.
505 00 $g1.$tIntroduction --$g2.$tBackground --$g3.$tPhysics of Gallium Nitride and Related Compounds --$g4.$tGaN Growth --$g5.$tp-Type GaN Obtained by Electron Beam Irradiation --$g6.$tn-Type GaN --$g7.$tp-Type GaN --$g8.$tInGaN --$g9.$tZn and Si Co-Doped InGaN/AlGaN Double-Heterostructure Blue and Blue-Green LEDs --$g10.$tInGaN Single-Quantum-Well LEDs --$g11.$tRoom-Temperature Pulsed Operation of Laser Diodes --$g12.$tEmission Mechanisms of LEDs and LDs --$g13.$tRoom Temperature CW Operation of InGaN MQW LDs --$g14.$tLatest Results: Lasers with Self-Organized InGaN Quantum Dots --$g15.$tConclusions.
650 0 $aSemiconductor lasers.$0http://id.loc.gov/authorities/subjects/sh85119896
650 0 $aGallium nitride.$0http://id.loc.gov/authorities/subjects/sh96005578
650 0 $aDiodes, Semiconductor.$0http://id.loc.gov/authorities/subjects/sh85038108
650 0 $aLight emitting diodes.$0http://id.loc.gov/authorities/subjects/sh85076892
700 1 $aFasol, Gerhard.$0http://id.loc.gov/authorities/names/n88134480
852 00 $boff,eng$hTA1700$i.N35 1997