MARC Record from marc_columbia

LEADER: 04471fam a2200433 a 4500
001 1648365
005 20220608204210.0
008 940929s1995 enka b 001 0 eng
010 $a 94037111
020 $a0521483085
020 $a0521483182 (pbk.)
035 $a(OCoLC)503323129
035 $a(OCoLC)ocn503323129
035 $9AKR1275CU
035 $a(NNC)1648365
035 $a1648365
040 $aDLC$cDLC$dDLC$dNNC$dOrLoB
050 00 $aQC173.4.S94$bB37 1995
082 00 $a530.4/17$220
100 1 $aBarabási, Albert-László.$0http://id.loc.gov/authorities/names/n94093881
245 10 $aFractal concepts in surface growth /$cAlbert-Lászlo Barabási, H. Eugene Stanley.
260 $aCambridge, England ;$aNew York, NY, USA :$bCambridge University Press,$c1995.
300 $axx, 366 pages :$billustrations ;$c26 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
504 $aIncludes bibliographical references (p. [332]-358) and index.
505 0 $aPt. 1. Introduction. 1. Interfaces in nature. 2. Scaling concepts. 3. Fractal concepts -- Pt. 2. Nonequilibrium roughening. 4. Random deposition. 5. Linear theory. 6. Kardar-Parisi-Zhang equation. 7. Renormalization group approach. 8. Discrete growth models -- Pt. 3. Interfaces in random media. 9. Basic phenomena. 10. Quenched noise. 11. Experiments -- Pt. 4. Molecular beam epitaxy. 12. Basic phenomena of MBE. 13. Linear theory of MBE. 14. Nonlinear theory for MBE. 15. Discrete models for MBE. 16. MBE experiments. 17. Submonolayer deposition. 18. The roughening transition. 19. Nonlocal growth models. 20. Diffusion bias -- Pt. 5. Noise. 21. Diffusive versus deposition noise. 22. Correlated noise. 23. Rare events -- Pt. 6. Advanced topics. 24. Multi-affine surfaces. 25. Variants of the KPZ equation. 26. Equilibrium fluctuations and directed polymers -- Pt. 7. Finale. 27. Summary of the continuum growth equations. 28. Outlook -- Appendix A: Numerical recipes -- Appendix B: Dynamic renormalization group.
505 8 $aAppendix C: Hamiltonian description.
520 $aThe use of fractal concepts in understanding various growth phenomena, such as molecular beam epitaxy (MBE) or fluid flow in porous media, is increasingly important these days. This book introduces the basic models and concepts that are necessary to understand in a pedagogical way the various growth processes leading to rough interfaces. The text will be accessible to readers not familiar with the field.
520 8 $aNature provides a large number of rough surfaces and interfaces. Similarly, rough surfaces are regularly observed in the laboratory during various technologically important growth technologies, such as MBE. In an attempt to understand the origin of the roughening phenomena, several computer models and theoretical approaches have recently been developed.
520 8 $aThe principal goal of this book is to describe the basic models and theories as well as the principles one uses to develop a model for a particular growth process. Furthermore, having described a particular growth model, the authors show how one can address and answer questions such as whether the surface will be rough, how rough it will be, and how to characterize this roughness. Having introduced the basic methods and tools needed to study a growth model, the authors discuss in detail two classes of phenomena: fluid flow in a porous medium and molecular beam epitaxy.
520 8 $aIn both cases, in addition to the models and analytical approaches, the authors describe the relevant experimental results as well. This text contains homework problems at the ends of chapters, and will be invaluable for advanced undergraduates, graduate students and researchers in physics, materials science, chemistry and engineering, and especially those interested in condensed matter physics and surface growth.
650 0 $aSurfaces (Physics)$0http://id.loc.gov/authorities/subjects/sh85130749
650 0 $aInterfaces (Physical sciences)$0http://id.loc.gov/authorities/subjects/sh94006577
650 0 $aCrystal growth.$0http://id.loc.gov/authorities/subjects/sh85034507
650 0 $aMolecular beam epitaxy.$0http://id.loc.gov/authorities/subjects/sh85086573
650 0 $aFractals.$0http://id.loc.gov/authorities/subjects/sh85051147
700 1 $aStanley, H. Eugene$q(Harry Eugene),$d1941-$0http://id.loc.gov/authorities/names/n50027918
852 00 $boff,che$hQC173.4.S94$iB37 1995