MARC record from Internet Archive

LEADER: 02178cam 2200601 4500
001 ocm00482487
003 OCoLC
005 20200110214737.0
008 721013s1973 nyua b 000 0 eng
010 $a 72010383
040 $aDLC$beng$cDLC$dUKM$dOCLCG$dDEBBG$dOCLCO$dOCLCF$dBEDGE$dOCLCQ$dOCLCO$dMDAVP$dOCLCQ$dVYT$dOCLCO$dCSJ$dOCLCO$dDHA$dCPO$dOCLCQ
015 $aGB7316049$2bnb
019 $a16235720$a960175531$a977455264
020 $a0471950009
020 $a9780471950004
035 $a(OCoLC)482487$z(OCoLC)16235720$z(OCoLC)960175531$z(OCoLC)977455264
050 00 $aTK7871.85
082 00 $a621.381/71$218
082 04 $a621.3815/2/028
084 $aUH 6200$2rvk
084 $aELT 293f$2stub
084 $aPHY 323f$2stub
100 1 $aWilson, Robert G.
245 10 $aIon beams; with applications to ion implantation$c[by] Robert G. Wilson [and] George R. Brewer.
260 $aNew York,$bWiley$c[1973]
300 $axii, 500 pages$billustrations$c23 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
338 $avolume$bnc$2rdacarrier
500 $a"A Wiley-Interscience publication."
504 $aIncludes bibliographical references.
650 0 $aIon implantation.
650 0 $aIon bombardment.
650 7 $aPhysique.$2eclas
650 7 $aIon bombardment.$2fast$0(OCoLC)fst00978567
650 7 $aIon implantation.$2fast$0(OCoLC)fst00978590
650 7 $aIonenimplantation$2gnd
650 7 $aIonenstrahl$2gnd
650 7 $aIon implantation.$2nasat
650 07 $aIonenimplantation.$2swd
650 07 $aIonenstrahl.$2swd
653 $aMicroelectronic devices$aSemiconductors$aDoping$aIon implantation
700 1 $aBrewer, George Raymond,$d1922-$eauthor.
776 08 $iOnline version:$aWilson, Robert G.$tIon beams; with applications to ion implantation.$dNew York, Wiley [1973]$w(OCoLC)602820112
029 1 $aAU@$b000000576934
029 1 $aAU@$b000021704937
029 1 $aAU@$b000055202332
029 1 $aDEBBG$bBV001967959
029 1 $aGBVCP$b020064136
029 1 $aHEBIS$b095904735
029 1 $aNZ1$b3839644
994 $aZ0$bP4A
948 $hNO HOLDINGS IN P4A - 257 OTHER HOLDINGS