Record ID | ia:iiinitridesemico0000unse_e1s6 |
Source | Internet Archive |
Download MARC XML | https://archive.org/download/iiinitridesemico0000unse_e1s6/iiinitridesemico0000unse_e1s6_marc.xml |
Download MARC binary | https://www.archive.org/download/iiinitridesemico0000unse_e1s6/iiinitridesemico0000unse_e1s6_meta.mrc |
LEADER: 01061cam a22002894a 4500
001 2002018101
003 DLC
005 20060810191011.0
008 020307s2002 nyua b 001 0 eng
010 $a 2002018101
020 $a1560329726 (v. 1 : alk. paper)
020 $a1560329734 (v. 2 : alk. paper)
040 $aDLC$cDLC$dDLC
042 $apcc
050 00 $aQC611.6.O6$bA18 2002
082 00 $a537.6/226$221
245 00 $aIII-nitride semiconductors :$boptical properties /$cedited by M.O. Manasreh and H.X. Jiang.
246 3 $a3-nitride semiconductors
260 $aNew York :$bTaylor & Francis Books,$c2002.
300 $a2 v. :$bill. ;$c24 cm.
440 0 $aOptoelectronic properties of semiconductors and superlattices ;$vv. 13-14
504 $aIncludes bibliographical references and indexes.
650 0 $aSemiconductors$xOptical properties.
650 0 $aNitrides$xOptical properties.
700 1 $aManasreh, Mahmoud Omar.
700 1 $aJiang, H. X.
856 42 $3Publisher description$uhttp://www.loc.gov/catdir/enhancements/fy0653/2002018101-d.html