| Record ID | ia:ganrelatedalloys0000unse |
| Source | Internet Archive |
| Download MARC XML | https://archive.org/download/ganrelatedalloys0000unse/ganrelatedalloys0000unse_marc.xml |
| Download MARC binary | https://www.archive.org/download/ganrelatedalloys0000unse/ganrelatedalloys0000unse_meta.mrc |
LEADER: 01260cam a22003134a 4500
001 00036166
003 DLC
005 20110421080311.0
008 000316s2000 paua b 101 0 eng
010 $a 00036166
020 $a155899503X
040 $aDLC$cDLC$dDLC
042 $apcc
050 00 $aTK7871.15.G33$bG37 2000
082 00 $a621.384/134$221
245 00 $aGaN and related alloys, 1999 :$bsymposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A. /$ceditors, Thomas H. Myers ... [et al.].
260 $aWarrendale, Pa. :$bMaterials Research Society,$cc2000.
300 $a1 v. (various pagings) :$bill. ;$c24 cm.
490 1 $aMaterials Research Society symposium proceedings ;$vv. 595
504 $aIncludes bibliographical references and index.
650 0 $aGallium nitride$vCongresses.
650 0 $aGallium alloys$vCongresses.
650 0 $aSemiconductors$xMaterials$vCongresses.
650 0 $aElectroluminescent devices$xMaterials$vCongresses.
650 0 $aLaser materials$vCongresses.
650 0 $aEpitaxy$vCongresses.
700 1 $aMyers, Thomas H.
830 0 $aMaterials Research Society symposia proceedings ;$vv. 595.
856 42 $3Publisher description$uhttp://www.loc.gov/catdir/enhancements/fy1108/00036166-d.html