MARC record from Internet Archive

LEADER: 05382cam 2200685 a 4500
001 ocm46908427
003 OCoLC
005 20220501192111.0
008 010508s2001 enka b 001 0 eng
040 $aUKM$beng$cUKM$dC#P$dOCLCQ$dBAKER$dYDXCP$dDEBBG$dOCL$dTULIB$dBDX$dOCLCF$dCRCPR$dOCLCQ$dOCLCO$dNAM$dOCLCQ$dCSJ$dOCLCO$dOCLCQ$dBGU$dOCLCO$dUKMGB$dOCLCQ$dOCLCA$dSFB$dOCLCO
015 $aGBA1X8366$2bnb
015 $aGBA1-X8366
016 7 $a008382600$2Uk
019 $a1127718161
020 $a0750307234
020 $a9780750307239
035 $a(OCoLC)46908427$z(OCoLC)1127718161
050 4 $aTK7871.96.B55$bM35 2001
082 04 $a621.38152$221
084 $aRL 97$2blsrissc
084 $aUP 3150$2rvk
100 1 $aMaiti, C. K.
245 10 $aApplications of silicon-germanium heterostructure devices /$cC.K. Maiti and G.A. Armstrong.
260 $aBristol :$bInstitute of Physics Pub.,$c©2001.
300 $axv, 401 pages :$billustrations ;$c25 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
338 $avolume$bnc$2rdacarrier
490 1 $aSeries in optics and optoelectronics
504 $aIncludes bibliographical references and index.
505 0 $a1. Introduction -- 1.1. Evolution of bipolar technology -- 1.2. Heterojunction bipolar transistors -- 1.3. Development of SiGe/SiGeC HBT Technology -- 1.4. Heterostructure field-effect transistors -- 1.5. Vertical heterostructure FETs -- 1.6. Optoelectronic devices -- 1.7. Applications of SiGe HBTs -- 2. Film Growth and Material Parameters -- 2.1. Strained layer epitaxy -- 2.2. Deposition techniques -- 2.3. Thermal stability of alloy layers -- 2.4. Bandgap and band discontinuity -- 2.5. Mobility -- 3. Principle of SiGe HBTS -- 3.1. Energy band -- 3.2. Terminal currents in a SiGe HBT -- 3.3. Transit time -- 3.4. Early voltage -- 3.5. Heterojunction barrier effects -- 3.6. High level injection -- 3.7. High-frequency figures-of-merit -- 3.8. Breakdown voltage, BV[subscript ceo] -- 4. Design of SiGe HBTS -- 4.1. Device modelling -- 4.2. Numerical methods -- 4.3. Material parameters for simulation -- 4.4. History of simulation of SiGe HBTs -- 4.5. Experimental SiGe HBTs -- 4.6. Device design issues -- 4.7. Small-signal ac analysis -- 5. Simulation of SiGe HBTS -- 5.1. Epitaxial-base SiGe HBT (1995) -- 5.2. Double Polysilicon self-aligned SiGe HBT (1998) -- 5.3. Energy balance simulation -- 5.4. SiGe HBTs on SOI substrates -- 5.5. Low-temperature simulation -- 5.6. I[superscript 2]L circuits using SiGe HBTs -- 5.7. Noise performance -- 5.8. Radiation effects on SiGe HBTs -- 6. Strained-Si Heterostructure FETs -- 6.1. Mobility in strained-Si -- 6.2. Band structure of strained-Si -- 6.3. Device applications -- 6.4. Simulation of strained-Si HFETs -- 6.5. MODFETs -- 6.6. Heterojunction Si/SiGe CMOS -- 7. SiGe Heterostructure FETs -- 7.1. HFETs: structures and operation -- 7.2. Design of SiGe p-HFETs -- 7.3. SiGe p-HFETs on SOI -- 7.4. SiGeC p-HFETs -- 7.5. Devices using poly-SiGe -- 7.6. Vertical FETs -- 7.7. Noise in p-HFETs -- 8. Metallization and Heterostructure Schottky Diodes -- 8.1. Deposition of metal films -- 8.2. Fabrication of Schottky diodes -- 8.3. Silicidation of group IV alloy films -- 8.4. Silicidation with titanium -- 8.5. Silicidation using Pt and Pd -- 8.6. Heterostructure Schottky diodes -- 8.7. Schottky diodes on strained-Si[subscript 1-x]Ge[subscript x] -- 8.8. Schottky diodes on strained-Si -- 9. SiGe Optoelectronic Devices -- 9.1. Optoelectronic devices in silicon -- 9.2. Optical properties of SiGe and SiGeC films -- 9.3. Optical devices using SiGe alloys -- 9.4. Optical devices with SiGeC and GeC alloys -- 9.5. Simulation of optoelectronic devices -- 10. RF Applications of SiGe HBTS -- 10.1. SiGe: Perspective for wireless communication -- 10.2. Technology comparison -- 10.3. MOS versus bipolar -- 10.4. SiGe BiCMOS technology -- 10.5. RF circuits -- 10.6. Passive components -- 10.7. Commercially available products.
650 0 $aHeterostructures.
650 0 $aOptoelectronic devices.
650 0 $aSilicon crystals.
650 0 $aGermanium crystals.
650 6 $aHétérostructures.
650 6 $aDispositifs optoélectroniques.
650 6 $aSilicium cristallisé.
650 6 $aCristaux de germanium.
650 7 $aGermanium crystals.$2fast$0(OCoLC)fst00942089
650 7 $aHeterostructures.$2fast$0(OCoLC)fst00955801
650 7 $aOptoelectronic devices.$2fast$0(OCoLC)fst01046908
650 7 $aSilicon crystals.$2fast$0(OCoLC)fst01118668
650 7 $aElektronisches Bauelement$2gnd
650 7 $aGermanium$2gnd
650 7 $aHeterostruktur$2gnd
650 7 $aSilicium$2gnd
700 1 $aArmstrong, G. A.
830 0 $aSeries in optics and optoelectronics.
856 41 $3Table of contents$uhttp://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=009763865&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
938 $aBaker & Taylor$bBKTY$c199.95$d199.95$i0750307234$n0003549777$sactive
938 $aBrodart$bBROD$n57092524$c$169.95
938 $aCRC Press$bCRCP$nTAF000IP144000
938 $aYBP Library Services$bYANK$n100252428
029 1 $aAU@$b000022679046
029 1 $aDEBBG$bBV014240768
029 1 $aUKMGB$b008382600
029 1 $aYDXCP$b100252428
994 $aZ0$bP4A
948 $hNO HOLDINGS IN P4A - 95 OTHER HOLDINGS