| Record ID | harvard_bibliographic_metadata/ab.bib.14.20150123.full.mrc:112468951:1028 |
| Source | harvard_bibliographic_metadata |
| Download Link | /show-records/harvard_bibliographic_metadata/ab.bib.14.20150123.full.mrc:112468951:1028?format=raw |
LEADER: 01028nam a2200253Ia 4500
001 014082806-0
005 20140605021519.0
008 140514s2012 si a b 000 0 eng d
020 $a9789814303071
035 0 $aocn879653114
040 $aUMI$cUMI$dMH
090 $aTK7871.95$b.O47 2012
100 1 $aOhsawa, Takashi.
245 10 $aFloating body cell :$ba novel capacitor-less DRAM cell /$cTakashi Ohsawa, Takeshi Hamamoto.
260 $a[Singapore] :$bPan Stanford ;$aBoca Raton, FL :$bCRC Press,$cc2012.
300 $a1 online resource (ix, 248 p.) :$bill.
588 $aDescription based on online resource; title from title page (Safari, viewed May 9, 2014).
504 $aIncludes bibliographical references.
650 0 $aMetal oxide semiconductor field-effect transistors.
650 0 $aSemiconductor storage devices.
700 1 $aHamamoto, Takeshi.
776 08 $iPrint version:$aOhsawa, Takashi.$tFloating body cell.$dSingapore : Pan Stanford, c2012$z9789814303071$w(OCoLC)768066976
988 $a20140605
906 $0OCLC