| Record ID | harvard_bibliographic_metadata/ab.bib.09.20150123.full.mrc:34952467:1264 |
| Source | harvard_bibliographic_metadata |
| Download Link | /show-records/harvard_bibliographic_metadata/ab.bib.09.20150123.full.mrc:34952467:1264?format=raw |
LEADER: 01264cam a2200337Ia 45e0
001 009033391-8
005 20030205113347.0
008 011115s2001 mdua bb f000 0 eng d
035 0 $aocm48429437
040 $aGPO$cGPO$dGAO
074 $a0247-D (MF)
086 0 $aC 13.58:6706
090 $aQD941$b.M33
100 1 $aMcFadden, Geoffrey B.
245 12 $aA phase-field model for high anisotropic interfacial energy$h[microform] /$cG.B. McFadden, J.J. Eggleston, P.W. Voorhees.
246 3 $aPhase field model for high anisotropic interfacial energy
260 $a[Gaithersburg, MD] :$bU.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology,$c[2001]
300 $a19 p. :$bill. ;$c28 cm.
440 0 $aNISTIR ;$v6706
500 $a"January 2001."
500 $aShipping list no.: 2002-0025-M.
504 $aIncludes bibliographical references (p. 18-19).
650 0 $aDendritic crystals$xMathematical models.
650 0 $aCrystal growth$xMathematical models.
650 0 $aAnisotropy.
650 0 $aPhase transformations (Statistical physics)
700 1 $aEggleston, J. J.
700 1 $aVoorhees, P. W.
710 2 $aNational Institute of Standards and Technology (U.S.)
988 $a20030204
906 $0OCLC