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This thesis presents a robost implementation of an electrothermal model for computer simulation of semiconductor devces. The ability to predict electrothermal effects using computer simulation methods has become paramount to microsensor design as well as estimation of maximum power handling capability, short circuit behavior, etc. in power devices. The author presents the background for the electrothermal model and its implementation in the program Simul, as well as its application to power devices such as the p-i-n diode and the IGBT"--Back cover.
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General electrothermal semiconductor device simulation
1994, Hartung-Gorre Verlag
in English
- 1. Aufl.
3891917872 9783891917879
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Book Details
Published in
Konstanz
Edition Notes
Includes bibliographical references (p. 125-137) and index.
Nachdruck der Diss. ETH Nr. 10680.
Text in English and abstract in English and German.
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