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January 24, 2010 | History

Millimetre-wave device characterization for nano-CMOS IC design 1 edition

Millimetre-wave device characterization for nano-CMOS IC design
Alain Marc Mangan

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Millimetre-wave device characterization for nano-CMOS IC design.

Published 2005 .
Written in English.

About the Book

At the 90-nm node, silicon technologies have reached a point where the transistor fT and f MAX simultaneously exceed 150 GHz, with a 1.2 V supply. With low fabrication costs for high volumes of circuits, RF-CMOS technologies are ideally suited to realize exciting new high bandwidth consumer products that operate in the mm-wave regime. Before this can happen, models of both active and passive devices will require a high degree of accuracy from DC, all the way up to mm-wave frequencies.This thesis presents new techniques that help leverage the power of measurements to characterize and model devices of nano-CMOS technologies well into the mm-wave regime. In particular, two new de-embedding techniques are devised in order to improve measurement accuracy, and reduce wafer area consumption. Moreover, the measured characteristics of various microstrip lines, varactors, and n-MOSFETs fabricated in a 90-nm RF-CMOS technology are analyzed in order to identify optimal geometries for high frequency design. An extraction methodology for a scalable physical model of accumulation-mode MOS varactors is also included.

Edition Notes

Source: Masters Abstracts International, Volume: 44-02, page: 0998.

Thesis (M.A.Sc.)--University of Toronto, 2005.

Electronic version licensed for access by U. of T. users.

GERSTEIN MICROTEXT copy on microfiche (2 microfiches).

The Physical Object

94 leaves.
Number of pages

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January 24, 2010 Edited by WorkBot add more information to works
December 11, 2009 Created by WorkBot add works page