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Last edited by WorkBot
January 24, 2010 | History

Millimetre-wave device characterization for nano-CMOS IC design 1 edition

Millimetre-wave device characterization for nano-CMOS IC design
Alain Marc Mangan

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Millimetre-wave device characterization for nano-CMOS IC design.

Published 2005 .
Written in English.

About the Book

At the 90-nm node, silicon technologies have reached a point where the transistor fT and f MAX simultaneously exceed 150 GHz, with a 1.2 V supply. With low fabrication costs for high volumes of circuits, RF-CMOS technologies are ideally suited to realize exciting new high bandwidth consumer products that operate in the mm-wave regime. Before this can happen, models of both active and passive devices will require a high degree of accuracy from DC, all the way up to mm-wave frequencies.This thesis presents new techniques that help leverage the power of measurements to characterize and model devices of nano-CMOS technologies well into the mm-wave regime. In particular, two new de-embedding techniques are devised in order to improve measurement accuracy, and reduce wafer area consumption. Moreover, the measured characteristics of various microstrip lines, varactors, and n-MOSFETs fabricated in a 90-nm RF-CMOS technology are analyzed in order to identify optimal geometries for high frequency design. An extraction methodology for a scalable physical model of accumulation-mode MOS varactors is also included.

Edition Notes

Source: Masters Abstracts International, Volume: 44-02, page: 0998.

Thesis (M.A.Sc.)--University of Toronto, 2005.

Electronic version licensed for access by U. of T. users.

GERSTEIN MICROTEXT copy on microfiche (2 microfiches).

The Physical Object

Pagination
94 leaves.
Number of pages
94

ID Numbers

Open Library
OL19216902M
ISBN 10
0494072695

History Created December 11, 2009 · 2 revisions Download catalog record: RDF / JSON

January 24, 2010 Edited by WorkBot add more information to works
December 11, 2009 Created by WorkBot add works page