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January 24, 2010 | History

Deuterium and helium trapping in tungsten under simultaneous implantation 1 edition

Deuterium and helium trapping in tungsten under simultaneous implantat ...
Heun Tae Lee

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Deuterium and helium trapping in tungsten under simultaneous implantation.

Published 2005 .
Written in English.

About the Book

Deuterium and Helium trapping in polycrystal tungsten under D-only, He-only, sequential, and simultaneous implantation was studied as a function of He fluence and implantation temperature. Deuterium implanted at 300K gets trapped at surface sites and extended defects. No deuterium was trapped in 700K implantations. Implanted helium was trapped within 30nm of the surface. It is suggested that He trapping occurs via the formation of He clusters, He vacancy complexes, and He bubbles from He self-trapping, and punching out of self-interstitial atoms (SIAs). In sequential implantations at 300K, He and D de-trap each other and re-trap at different configurations; at 700K, helium re-traps at the same configuration but at a much reduced amount. In simultaneous implantations, He mitigates D diffusion, and D limits He trapping; D may enhance He trapping at vacancy complexes. No enhanced D retention was observed, and no D was trapped at 700K simultaneous implantations.

Edition Notes

Source: Masters Abstracts International, Volume: 44-02, page: 0954.

Thesis (M.A.Sc.)--University of Toronto, 2005.

Electronic version licensed for access by U. of T. users.

GERSTEIN MICROTEXT copy on microfiche (2 microfiches).

The Physical Object

98 leaves.
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January 24, 2010 Edited by WorkBot add more information to works
December 11, 2009 Created by WorkBot add works page