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January 24, 2010 | History

Modeling and design of low-voltage ferroelectric memories 1 edition

Modeling and design of low-voltage ferroelectric memories
Jeffery Chow


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Modeling and design of low-voltage ferroelectric memories.

Published 2006 .
Written in English.

About the Book

The migration of FeRAM's to low operating voltages (1V and below) is resulting in new challenges in the modeling and design of ferroelectric memories. This thesis presents a Verilog-A model that accounts for the voltage-dependent switching-time (VDST) of ferroelectric capacitors evident at low voltages. The VDST Model is adaptable to the switching characteristics of various ferroelectric capacitor technologies, compatible with popular circuit simulators such as Spectre and Nanosim, and exhibits a 23 times speedup over previous work. The model is then used in the design of a low-impedance FeRAM read scheme that maximizes the achievable sense margin at low voltages. The proposed Charge-Mirroring Read Scheme is implemented in a 16-kbit FeRAM testchip targeted for a 0.18mum/0.35mum CMOS/PZT process. Based on simulation results, it achieves a 70% reduction in area, 40% reduction in read access time, and 400% increase in memory bandwidth in comparison to previous work.

Edition Notes

Source: Masters Abstracts International, Volume: 44-06, page: 2909.

Thesis (M.A.Sc.)--University of Toronto, 2006.

Electronic version licensed for access by U. of T. users.

ROBARTS MICROTEXT copy on microfiche.

The Physical Object

96 leaves.
Number of pages

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Open Library

History Created December 11, 2009 · 2 revisions Download catalog record: RDF / JSON

January 24, 2010 Edited by WorkBot add more information to works
December 11, 2009 Created by WorkBot add works page