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January 24, 2010 | History

Characterization of surface passivation of crystalline silicon by hydrogenated amorphous silicon using photocarrier radiometry 1 edition

Characterization of surface passivation of crystalline silicon by hydr ...
Keith R. Leong

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Characterization of surface passivation of crystalline silicon by hydrogenated amorphous silicon using photocarrier radiometry.

Published 2006 .
Written in English.

About the Book

In the silicon heterojunction solar cell, the crystalline silicon (c-Si) surface forms an interface with hydrogenated amorphous silicon (a-Si:H). This thesis reports on the development and evaluation of surface passivation schemes of c-Si with a-Si:H. The passivation consists of a three step process: cleaning of the c-Si surface, etching of the native oxide, and deposition the a-Si:H layer. Evaluation of the passivation schemes was conducted by recombination lifetime measurements using Photocarrier Radiometry (PCR). The SPM, RCA SC1, and SC2 cleaning sequence, followed by either buffered HF, and the growth of the a-Si:H film produced the highest PCR characteristic lifetime (80.9 mus). In the high injection regime, lifetime from PCR correlated with that from mu-PCD within a factor of 1.2 to 2.5. PCR laser annealing of the a-Si:H was observed for laser intensities at or above 2.9 suns. ToF-SIMS measurements identified Na, K, Ca, O, and SiO2 contaminants at the interface.

Edition Notes

Source: Masters Abstracts International, Volume: 44-06, page: 2921.

Advisor: Nazir Kherani.

Thesis (M.A.Sc.)--University of Toronto, 2006.

Electronic version licensed for access by U. of T. users.

ROBARTS MICROTEXT copy on microfiche.

The Physical Object

Pagination
125 leaves.
Number of pages
125

ID Numbers

Open Library
OL19215652M
ISBN 13
9780494163399

History Created December 11, 2009 · 2 revisions Download catalog record: RDF / JSON

January 24, 2010 Edited by WorkBot add more information to works
December 11, 2009 Created by WorkBot add works page