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January 24, 2010 | History

Noise modelling of silicon germanium heterojunction bipolar transistors at millimetre-wave frequencies 1 edition

Noise modelling of silicon germanium heterojunction bipolar transistor ...
Kenneth Hoi Kan Yau

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Noise modelling of silicon germanium heterojunction bipolar transistors at millimetre-wave frequencies.

Published 2006 .
Written in English.

About the Book

Using 2D device simulations, it is predicted that the cutoff frequencies of SiGe HBTs can be scaled beyond 500GHz. These devices have the potential to enable advanced millimetre-wave circuits. However, shot noise correlation, which is captured through noise transit time, becomes increasingly important as circuit designers continue to push the operating frequencies of the circuits.The technique for extracting the SiGe HBT noise parameters only from the measured y-parameters is extended to account for the presence of correlation. Unlike earlier publications, this method does not need to fit the noise transit time to measured noise data. The technique was validated using 2D device simulations and measured noise parameter data. It was found that the NFMIN of SiGe HBTs with ƒ T/ƒMAX of 160GHz is approximately 1.5dB lower at 60GHz when noise correlation is accounted for. However, for these devices, noise correlation proves to be insignificant below 18GHz.

Edition Notes

Source: Masters Abstracts International, Volume: 44-06, page: 2940.

Advisor: Sorin P. Voinigescu.

Thesis (M.A.Sc.)--University of Toronto, 2006.

Electronic version licensed for access by U. of T. users.

ROBARTS MICROTEXT copy on microfiche.

The Physical Object

Pagination
101 leaves.
Number of pages
101

ID Numbers

Open Library
OL19214955M
ISBN 13
9780494161296

History Created December 11, 2009 · 2 revisions Download catalog record: RDF / JSON

January 24, 2010 Edited by WorkBot add more information to works
December 11, 2009 Created by WorkBot add works page